EO Unveils Revolutionary 3D X-AI Chip: 100x Performance Boost and 99% Power Reduction!

On August 18, NEO Semiconductor announced the launch of its 3D X-AI chip technology, designed to replace existing DRAM chips in high-bandwidth memory (HBM). This innovation aims to enhance artificial intelligence processing performance while significantly reducing energy consumption.

The 3D X-AI chip integrates 8,000 neuron circuits that execute AI processing tasks directly within 3D DRAM, achieving up to a 100-fold acceleration in AI performance. Additionally, it dramatically reduces the need for data transfer, leading to a remarkable 99% decrease in power consumption. This reduction addresses power and heating issues associated with data buses.

NEO Semiconductor's breakthrough also offers eight times the memory density, utilizing 300 DRAM layers in the 3D X-AI chip, which supports larger-scale AI models. Building on the world's first 3D DRAM technology introduced by the company, the 3D X-AI chip further innovates with HBM-like stacked packaging, delivering AI processing throughput of up to 10 TB/s per chip.

According to Andy Hsu, the founder and CEO of NEO Semiconductor, the existing separation of data storage and processing in AI chip architecture leads to performance bottlenecks and high power consumption. The 3D X-AI chip mitigates this by performing AI processing within each HBM chip, substantially lowering the amount of data transferred between HBM and GPUs, thereby enhancing performance and reducing power usage.

Industry analyst Jay Kramer believes that the adoption of 3D X-AI technology will accelerate the development of emerging AI use cases and foster the creation of new applications, marking a new era for innovation in AI.